MCQs on BJT Biasing Circuits - I

The maximum voltage across collector-emitter terminals

The minimum base current required for conduction

The fixed point representing the DC operating condition

The cutoff threshold of a transistor

Both junctions are reverse biased

Base-emitter is forward biased and base-collector is reverse biased

Both junctions are forward biased

Base-collector is forward biased and base-emitter is reverse biased

I_B = (V_CC - V_BE)/R_C

I_B = V_CE / R_B

I_B = (V_CC - V_BE)/R_B

I_B = V_BE / R_B

Low gain

Poor thermal stability

Complexity in design

High input resistance

To increase input impedance

To improve voltage gain

To improve thermal stability

To increase base current

It remains unchanged

It becomes steeper

It becomes flatter

It shifts upward

I_B = (V_CC - V_BE)/(R_B + R_E)

I_B = (V_CC - V_BE)/(R_B + (1 + β) R_E)

I_B = V_BE / R_B

I_B = V_CC / R_B

Cut-off

Active

Reverse-active

Saturation

I_C = α I_E

I_C = I_B / β

I_C = β I_B

I_C = β² I_B

1.2 V

0.3 V

0.6 to 0.7 V

2 V